SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first conductivity-type drift layer, a second conductivity-type base layer formed in a front surface portion of the drift layer, a second conductivity-type collector layer formed in the drift layer and separated from the base layer, gate insulation layers formed on a surface of the base layer, gate electrodes individually formed on the gate insulation layers, an emitter layer formed in a front surface portion of the base layer, an emitter electrode electrically connected to the emitter layer and the base layer, and a collector electrode electrically connected to the collector layer. A rate of change in a gate voltage of a part of the gate electrodes is smaller than a rate of change in a gate voltage of a remainder of the gate electrodes. The emitter layer is in contact with only the gate insulation layers provided with the part of the gate electrodes.

主权项

1. A semiconductor device comprising:
a first conductivity-type drift layer; a second conductivity-type base layer formed in a front surface portion of the drift layer; a second conductivity-type collector layer formed in the drift layer and separated from the base layer; a plurality of gate insulation layers formed on a surface of the base layer; a plurality of gate electrodes individually formed on the plurality of gate insulation layers; an emitter layer formed in a front surface portion of the base layer; an emitter electrode electrically connected to the emitter layer and the base layer; and a collector electrode electrically connected to the collector layer, wherein a rate of change in a gate voltage of a part of the plurality of gate electrodes is smaller than a rate of change in a gate voltage of a remainder of the plurality of gate electrodes, the emitter layer is in contact with the plurality of gate insulation layers provided with the part of the plurality of gate electrodes, and the emitter layer is not in contact with the plurality of gate insulation layers provided with the remainder of the plurality of gate electrodes.