| 摘要 |
This semiconductor device (100A) includes: a gate electrode (3); a gate insulating layer (4); an oxide layer (50) which is formed over the gate insulating layer (4) and which includes a semiconductor region (51) and a first conductor region (55) that contacts with the semiconductor region (51) and where the semiconductor region (51) at least partially overlaps with the gate electrode (3) with the gate insulating layer (4) interposed between them; a protective layer (8b) covering the upper surface of the semiconductor region (51); source and drain electrodes (6s, 6d) electrically connected to the semiconductor region (51); and a transparent electrode (9) arranged so as to overlap at least partially with the first conductor region (55) with a dielectric layer interposed between them. The drain electrode (6d) contacts with the first conductor region (55). When viewed along a normal to the substrate, an end portion of the protective layer (8b) is substantially aligned with an end portion of the drain, source or gate electrode (6d, 6s, 3), and at least a portion of a boundary between the semiconductor region (51) and the first conductor region (55) is substantially aligned with the end portion of the protective layer (8b). |
