发明名称 PROCESS KIT OF PHYSICAL VAPOR DEPOSITION CHAMBER AND FABRICATING METHOD THEREOF
摘要 A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.
申请公布号 US2015129414(A1) 申请公布日期 2015.05.14
申请号 US201314080561 申请日期 2013.11.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 BIH Shih-Wei;CHEN Wei-Jen;CHEN Yen-Yu;HSIAO Hsien-Chieh;LEE Chang-Sheng;LIAO Wei-Chen;ZHANG Wei
分类号 H01J37/34;C23C14/34 主分类号 H01J37/34
代理机构 代理人
主权项 1. A physical vapor deposition (PVD) chamber, comprising: a sputtering target having a sputtering surface that is in contact with a process region; a power supply electrically connected to the sputtering target; a process kit having an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface; and a substrate support having a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.
地址 HSINCHU TW
您可能感兴趣的专利