发明名称 |
PROCESS KIT OF PHYSICAL VAPOR DEPOSITION CHAMBER AND FABRICATING METHOD THEREOF |
摘要 |
A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm. |
申请公布号 |
US2015129414(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314080561 |
申请日期 |
2013.11.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
BIH Shih-Wei;CHEN Wei-Jen;CHEN Yen-Yu;HSIAO Hsien-Chieh;LEE Chang-Sheng;LIAO Wei-Chen;ZHANG Wei |
分类号 |
H01J37/34;C23C14/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
1. A physical vapor deposition (PVD) chamber, comprising:
a sputtering target having a sputtering surface that is in contact with a process region; a power supply electrically connected to the sputtering target; a process kit having an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface; and a substrate support having a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm. |
地址 |
HSINCHU TW |