| 发明名称 |
SEMIPOLAR NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Disclosed is a semi-polar nitride semiconductor structure and a method of fabricating the semi-polar nitride semiconductor structure. The disclosed semi-polar nitride semiconductor structure comprises a nitride semiconductor layer which is formed on a silicon board that has a Si (11k) surface that is within a 7<=k<=13 range, and shows a polarization electric field that is close to 0. |
| 申请公布号 |
KR20150052465(A) |
申请公布日期 |
2015.05.14 |
| 申请号 |
KR20130133820 |
申请日期 |
2013.11.05 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUN YOUN;KIM, JAE KYUN;KIM, JOO SUNG;PARK, YOUNG SOO;TAK, YOUNG JO |
| 分类号 |
H01L33/16;H01L21/02;H01L33/02 |
主分类号 |
H01L33/16 |
| 代理机构 |
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代理人 |
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