发明名称 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING THE THIN FILM TRANSISTOR
摘要 The present invention relates to a thin film transistor and a method of manufacturing the same and an electronic device including the thin film transistor. The thin film transistor includes a gate electrode, an organic semiconductor overlapped with the gate electrode, a gate insulating layer located between the gate electrode and the organic semiconductor, a source electrode and a drain electrode which is electrically connected to the upper part of the semiconductor, and a solvent selectivity photoresist pattern which is located between the source electrode and the drain electrode on the upper part of the organic semiconductor.
申请公布号 KR20150052763(A) 申请公布日期 2015.05.14
申请号 KR20140076624 申请日期 2014.06.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JI YOUL;KIM, JOO YOUNG;CHUNG, JONG WON;LEE, SANG YOON;PARK, JEONG IL
分类号 H01L51/05;H01L29/786;H01L51/40 主分类号 H01L51/05
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