发明名称 |
THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING THE THIN FILM TRANSISTOR |
摘要 |
The present invention relates to a thin film transistor and a method of manufacturing the same and an electronic device including the thin film transistor. The thin film transistor includes a gate electrode, an organic semiconductor overlapped with the gate electrode, a gate insulating layer located between the gate electrode and the organic semiconductor, a source electrode and a drain electrode which is electrically connected to the upper part of the semiconductor, and a solvent selectivity photoresist pattern which is located between the source electrode and the drain electrode on the upper part of the organic semiconductor. |
申请公布号 |
KR20150052763(A) |
申请公布日期 |
2015.05.14 |
申请号 |
KR20140076624 |
申请日期 |
2014.06.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JI YOUL;KIM, JOO YOUNG;CHUNG, JONG WON;LEE, SANG YOON;PARK, JEONG IL |
分类号 |
H01L51/05;H01L29/786;H01L51/40 |
主分类号 |
H01L51/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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