发明名称 PRE-CLEANING OF SEMICONDUCTOR STRUCTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of pre-cleaning a semiconductor structure and associated modular semiconductor process tools.SOLUTION: A method of pre-cleaning a semiconductor structure includes the steps of: providing a semiconductor structure 30 having an exposed dielectric layer 36 (patterned PI layer) of an organic dielectric material, the dielectric layer 36 having one or more features formed therein, the features exposing one or more electrically conductive structures to be pre-cleaned, each of the electrically conductive structures including a metal layer (aluminum layer) 34, optionally with a barrier layer 42 (aluminum oxide layer) formed thereon, and the surface area of the exposed dielectric layer being greater than the surface area of the electrically conductive structures exposed by the dielectric layer; and pre-cleaning the semiconductor structure by performing an Ar/Hsputter etching to remove a material from the exposed electrically conductive structures and to remove an organic dielectric material from the exposed dielectric layer.</p>
申请公布号 JP2015092548(A) 申请公布日期 2015.05.14
申请号 JP20140187736 申请日期 2014.09.16
申请人 SPTS TECHNOLOGIES LTD 发明人 ALEX THEODOSSIOU;STEVE BURGESS
分类号 H01L21/3065;C23C14/02;C23C16/02;H01L21/768 主分类号 H01L21/3065
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