LOGIC EMBEDDED NONVOLATILE MEMORY DEVICE

摘要

A logic embedded nonvolatile memory device is provided which includes a first erase gate line for erasing a plurality of first memory cells; a second erase gate line electrically separated from the first erase gate line and for erasing a plurality of second memory cells; a global erase gate line supplied with an erase voltage; and an erase gate selection switch formed between the first memory cells and the second memory cells, wherein the erase gate selection switch connects the global erase gate line to the first erase gate line or the second erase gate line according to an erase control signal.

主权项

1. A logic embedded nonvolatile memory device comprising:
a first erase gate line that is configured to erase a plurality of first memory cells; a second erase gate line that is configured to erase a plurality of second memory cells; a global erase gate line that is configured to receive an erase voltage from a voltage source; and an erase gate selection switch that is connected between the global erase gate line and the first and second erase gate lines, wherein the erase gate selection switch is configured to connect the global erase gate line to only one of the first erase gate line or the second erase gate line in response to an erase control signal having a first value.