| 摘要 |
Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers. |
| 主权项 |
1. A method for cleaning a substrate, the method comprising:
receiving a substrate in a cleaning system, the cleaning system including a wet clean system, a processing chamber, and a fluid delivery sub system, the substrate including a hardmask layer deposited on an underlying layer, and a polymer film at least partially covering the hardmask layer and exposed portion of the underlying layer; irradiating a process gas mixture with ultraviolet radiation such that reactive oxygen species are formed; exposing the substrate to the process gas mixture having reactive oxygen species; spinning the substrate on a substrate holder in the processing chamber; and depositing a hydrogen peroxide-containing liquid mixture on the substrate while the substrate is spinning. |
