| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of an SGT which forms a fin-shaped semiconductor layer, a columnar semiconductor layer, a gate electrode and gate wiring by using two masks, and which is a gate last process; and provide a structure of the SGT obtained as a result.SOLUTION: A semiconductor device manufacturing method comprises: a first process of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulation film around the fin-shaped semiconductor layer; and a second process of forming a second insulation film around the fin-shaped semiconductor layer after the first process, depositing and planarizing a first polysilicon on the second insulation film, forming a second resist for forming gate wiring and a columnar semiconductor layer in a direction perpendicular to a direction of the fin-shaped semiconductor layer, and etching the first polysilicon, the second insulation film and the fin-shaped semiconductor layer to form the columnar semiconductor layer and a first dummy gate by the first polysilicon.</p> |
