METHOD OF FORMING CARBON-CONTAINING THIN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE METHOD

摘要

A method of forming a carbon-containing thin film and a method of manufacturing a semiconductor device using the method of forming the carbon-containing thin film are described. The method of forming a carbon-containing thin film includes the steps of introducing a substrate into a chamber, injecting hydrocarbon gas and at least nitrogen gas simultaneously into the chamber, and depositing a carbon-containing thin film including carbon and nitrogen on the substrate, thereby forming a carbon-containing thin film having high selectivity and uniform thickness.

主权项

1. A method of forming a thin film, the method comprising the steps of:
introducing a substrate into a chamber; injecting hydrocarbon gas and nitrogen gas simultaneously into the chamber; and depositing a carbon-containing thin film comprising carbon and nitrogen on the substrate.