SELF REFERENCE THERMALLY ASSISTED MRAM WITH LOW MOMENT FERROMAGNET STORAGE LAYER

摘要

A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.

主权项

1. A thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing, the device comprising:
a tunnel barrier disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer, wherein the ferromagnetic sense layer, the tunnel barrier, and the ferromagnetic storage layer together form a magnetic tunnel junction; and an antiferromagnetic pinning layer disposed adjacent to the ferromagnetic storage layer; wherein the antiferromagnetic pinning layer pins a magnetic moment of the ferromagnetic storage layer until heating is applied; wherein at least one of: the ferromagnetic storage layer includes a non-magnetic material to reduce a storage layer magnetization of the ferromagnetic storage layer as compared to not having the non-magnetic material; and the ferromagnetic sense layer includes the non-magnetic material to reduce a sense layer magnetization of the ferromagnetic sense layer as compared to not having the non-magnetic material; and wherein a reduction at least one of in the storage layer magnetization of the ferromagnetic storage layer and in the sense layer magnetization of the ferromagnetic sense layer reduces magneto static interaction between the ferromagnetic storage layer and the ferromagnetic sense layer, resulting in less power to read and write the magnetic tunnel junction as compared to the ferromagnetic storage layer and the ferromagnetic sense layer not having the non-magnetic material.