SUBSTRATE USED FOR GROUP III-V NITRIDE GROWTH AND METHOD FOR PREPARATION THEREOF

摘要

A substrate used for group III-V nitride growth and method for fabrication thereof, said fabrication method comprising the following steps: 1) providing a growth substrate, and forming on the surface of said growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of said buffer layer; 3) by means of a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on said semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.