THIN-FILM TRANSISTOR USING POLARIZATION OF LIQUID CRYSTAL AND METHOD FOR FABRICATING AND DRIVING THE SAME

摘要

The present invention relates to a thin film transistor using polarization of liquid crystal and a method for fabricating and driving the same, capable of inducing channel formation between a source and a drain by using the polarization of liquid crystal. The thin film transistor may include a substrate; a semiconductor layer located on the substrate; a source and a drain electrode which is separated by the semiconductor layer on the substrate and are separated from each other; a gate electrode which is separated from the source electrode and the drain electrode on the substrate; and a liquid crystal layer which is located in at least part of the semiconductor layer and at least part of the gate electrode, and induces channel formation through a polarization phenomenon due to a voltage applied to the gate electrode.