EPITAXIAL WAFERS AVOIDING EDGE MELT-BACK-ETCHING AND METHOD FOR FABRICATING THE SAME

摘要

An epitaxial wafer (100),comprising a silicon substrate having a principal surface with a center region (110) and an edge region near an outer circumferential line of the principal surface, and a polycrystalline or amorphous edge-mask layer (120), which is made of a material suitable for growth of group-III-nitride material thereon and which is deposited directly and only on the edge region of the principal surface,such that the center region and the edge-mask layer (120) together form a growth substrate for a group-III-nitride buffer layer (130) structure conformally deposited thereon.