发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce a space in and cut down costs of a standard cell for realizing such a circuit that drives a plurality of complementary transistor pairs (CMOS pairs) in-phase.SOLUTION: A standard cell of a type that drives a complementary pair in-phase is included in a cell for forming a desired circuit. The complementary in-phase drive type standard cell includes one or more non-rectangular standard cells, the non-rectangular standard cell being such that the size of a standardized cell length is defined by a cell length twice or more of a basic cell length corresponding to an equivalent of one complementary transistor pair, and the interconnected gate electrodes of a plurality of complementary transistor pairs that are driven in-phase are formed as common gate electrodes 27, in which way the complementary in-phase drive type standard cell is formed. The complementary in-phase drive type standard cell is provided with a first rectangular section in which the common gate electrodes 27 are linearly arranged in the direction of the standard cell length and a second rectangular section in which the common gate electrodes 27 extend along one of two sides facing each other in the standardized cell length direction of the first rectangular section.
申请公布号 JP2015092626(A) 申请公布日期 2015.05.14
申请号 JP20150007385 申请日期 2015.01.19
申请人 SONY CORP 发明人 TANAKA YOSHINORI
分类号 H01L21/82;H01L21/822;H01L27/04 主分类号 H01L21/82
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