发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a photosensor that allows performing imaging at high resolution in a semiconductor device including the photosensor.SOLUTION: A semiconductor device includes a photosensor having a photodiode, a first transistor, and a second transistor. The photodiode has a function generating an electrical signal according to the intensity of light. The first transistor accumulates charges in its gate and has a function converting the accumulated charges into an output signal. The second transistor transfers the electrical signal generated from the photodiode to the gate of the first transistor and has a function retaining the charges stored in the gate of the first transistor. The first transistor has a back gate and can change its threshold voltage by changing a potential of the back gate.</p>
申请公布号 JP2015092596(A) 申请公布日期 2015.05.14
申请号 JP20140251750 申请日期 2014.12.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KUROKAWA YOSHIMOTO
分类号 H01L27/146;H01L21/28;H01L29/786;H04N5/369 主分类号 H01L27/146
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