| 发明名称 |
PHOTOMASK AND METHOD FOR FORMING DUAL STI STRUCTURE BY USING THE SAME |
| 摘要 |
In a method for manufacturing a dual shallow trench isolation structure, a substrate is provided, and a mask layer is formed on the substrate. The mask layer is patterned by using a photomask to form at least one first hole and at least one second hole in the mask layer, in which a depth of the at least one first hole is different from a depth of the at least one second hole. The mask layer and the substrate are etched to form at least one first trench having a first depth and at least one second trench having a second depth, in which the first depth is different from the second depth. The remaining mask layer is removed. A first isolation layer and A second isolation layer are respectively formed in the at least one first trench and the at least one second trench. |
| 申请公布号 |
US2015132919(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314080631 |
申请日期 |
2013.11.14 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG Fu-Cheng;YEN Chai-Der;TSAI Fu-Tsun;JENG Chi-Cherng;HUANG Chih-Mu |
| 分类号 |
H01L21/762;G03F1/00 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a dual shallow trench isolation structure, the method comprising:
providing a substrate; forming a mask layer on the substrate; patterning the mask layer by using a photomask to form at least one first hole and at least one second hole in the mask layer, wherein a depth of the at least one first hole is different from a depth of the at least one second hole; etching the mask layer and the substrate to form at least one first trench having a first depth and at least one second trench having a second depth, wherein the first depth is different from the second depth; removing the remaining mask layer; and forming a first isolation layer and a second isolation layer respectively in the at least one first trench and the at least one second trench. |
| 地址 |
Hsinchu TW |
