| 发明名称 |
BONDED STACKED WAFERS AND METHODS OF ELECTROPLATING BONDED STACKED WAFERS |
| 摘要 |
A method including: providing a first wafer stack; applying a first bonding layer on the first wafer stack; providing a second wafer stack, where the second wafer stack includes vias; and applying a second bonding layer to the second wafer stack. The vias extend through the second wafer stack and to the second bonding layer. The second bonding layer is bonded to the first bonding layer. A seed layer is applied on a side of the second wafer stack opposite the second bonding layer such that a material of the seed layer (i) contacts the vias, and (ii) extends over and past ends of the second wafer stack and onto the first bonding layer. |
| 申请公布号 |
US2015132891(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201514605486 |
申请日期 |
2015.01.26 |
| 申请人 |
Maxim Integrated Products, Inc. |
发明人 |
Zou Quanbo;Sridhar Uppili;Kelkar Amit S.;Ying Xuejun |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a first wafer stack; applying a first bonding layer on the first wafer stack; providing a second wafer stack, wherein the second wafer stack comprises vias; applying a second bonding layer to the second wafer stack, wherein the vias extend through the second wafer stack and to the second bonding layer; bonding the second bonding layer to the first bonding layer; and applying a seed layer on a side of the second wafer stack opposite the second bonding layer such that a material of the seed layer (i) contacts the vias, and (ii) extends over and past ends of the second wafer stack and onto the first bonding layer. |
| 地址 |
San Jose CA US |
