| 摘要 |
The present invention is a sputtering target comprising oxides of In, Ga, and Zn, the mass ratio of a dissolved residue, obtained when an amount of the sputtering target corresponding to 40% by mass thereof with respect to 28% by mass of hydrochloric acid at 80°C is immersed in the hydrochloric acid for 24 hours, being 0.5% by mass with respect to the immersed sputtering target. This sputtering target comprising oxides of In, Ga, and Zn has a low incidence of arcing or nodules during sputtering, and oxide semiconductor films can be obtained at high yield from this sputtering target. |
