| 发明名称 |
HIGH PURITY METALLIC TOP COAT FOR SEMICONDUCTOR MANUFACTURING COMPONENTS |
| 摘要 |
A method for coating a component for use in a semiconductor chamber for plasma etching includes providing a component for use in a semiconductor manufacturing chamber, loading the component into a deposition chamber, cold spray coating a metal powder onto the component to form a coating on the component, and anodizing the coating to form an anodization layer. |
| 申请公布号 |
US2015132602(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314079586 |
申请日期 |
2013.11.13 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Sun Jennifer Y.;Firouzdor Vahid |
| 分类号 |
C25D11/02;C23C4/08;C23C4/18;C25D11/30;H01L21/67;C25D11/04;C25D11/34;C23C4/12;H01L21/683 |
主分类号 |
C25D11/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a component for use in a semiconductor manufacturing chamber; loading the component into a deposition chamber; cold spray coating a metal powder onto the component to form a coating on the component; and anodizing the coating to form an anodization layer. |
| 地址 |
Santa Clara CA US |
