发明名称 |
Low Dropout Regulator and Related Method |
摘要 |
A device is configured to provide low dropout regulation. An amplifier stage includes a first transistor electrically connected to an output of the device, and a second transistor. A current mirror includes a third transistor electrically connected to the second transistor, and a fourth transistor electrically connected to the third transistor. The auxiliary current source has a control terminal electrically connected to a gate electrode of the fourth transistor. The pull down stage includes a fifth transistor having a gate electrode electrically connected to a drain electrode of the first transistor, and a sixth transistor having a gate electrode electrically connected to the gate electrode of the fourth transistor. The pull up transistor has a gate electrode electrically connected to a drain electrode of the fifth transistor. The first capacitor has a first terminal electrically connected to the gate electrode of the first transistor. |
申请公布号 |
US2015130427(A1) |
申请公布日期 |
2015.05.14 |
申请号 |
US201314080238 |
申请日期 |
2013.11.14 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chou Chung-Cheng;Lee Po-Hao |
分类号 |
G05F1/46 |
主分类号 |
G05F1/46 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
an amplifier stage including:
a first transistor having a control terminal electrically connected to an output of the device; anda second transistor; a current mirror including:
a third transistor having a gate electrode electrically connected to a gate electrode of the second transistor; anda fourth transistor having a drain electrode electrically connected to a drain electrode of the third transistor; an auxiliary current source having a control terminal electrically connected to a gate electrode of the fourth transistor; a pull down stage including:
a fifth transistor having a gate electrode electrically connected to a drain electrode of the first transistor; anda sixth transistor having a gate electrode electrically connected to the gate electrode of the fourth transistor; a pull up transistor having a gate electrode electrically connected to a drain electrode of the fifth transistor; and a first capacitor having a first terminal electrically connected to the gate electrode of the first transistor. |
地址 |
Hsin-Chu TW |