发明名称 Low Dropout Regulator and Related Method
摘要 A device is configured to provide low dropout regulation. An amplifier stage includes a first transistor electrically connected to an output of the device, and a second transistor. A current mirror includes a third transistor electrically connected to the second transistor, and a fourth transistor electrically connected to the third transistor. The auxiliary current source has a control terminal electrically connected to a gate electrode of the fourth transistor. The pull down stage includes a fifth transistor having a gate electrode electrically connected to a drain electrode of the first transistor, and a sixth transistor having a gate electrode electrically connected to the gate electrode of the fourth transistor. The pull up transistor has a gate electrode electrically connected to a drain electrode of the fifth transistor. The first capacitor has a first terminal electrically connected to the gate electrode of the first transistor.
申请公布号 US2015130427(A1) 申请公布日期 2015.05.14
申请号 US201314080238 申请日期 2013.11.14
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chou Chung-Cheng;Lee Po-Hao
分类号 G05F1/46 主分类号 G05F1/46
代理机构 代理人
主权项 1. A device comprising: an amplifier stage including: a first transistor having a control terminal electrically connected to an output of the device; anda second transistor; a current mirror including: a third transistor having a gate electrode electrically connected to a gate electrode of the second transistor; anda fourth transistor having a drain electrode electrically connected to a drain electrode of the third transistor; an auxiliary current source having a control terminal electrically connected to a gate electrode of the fourth transistor; a pull down stage including: a fifth transistor having a gate electrode electrically connected to a drain electrode of the first transistor; anda sixth transistor having a gate electrode electrically connected to the gate electrode of the fourth transistor; a pull up transistor having a gate electrode electrically connected to a drain electrode of the fifth transistor; and a first capacitor having a first terminal electrically connected to the gate electrode of the first transistor.
地址 Hsin-Chu TW