DEVICES AND METHODS RELATED TO RADIO-FREQUENCY SWITCHES HAVING REDUCED-RESISTANCE METAL LAYOUT

摘要

Devices and methods related to radio-frequency (RF) switches having reduced-resistance metal layout. In some embodiments, a field-effect transistor (FET) based RF switch device can include a plurality of fingers arranged in an interleaved configuration such that a first group of the fingers are electrically connected to a source contact and a second group of the fingers are electrically connected to a drain contact. At least some of the fingers can have a current carrying capacity that varies as a function of location along a direction in which the fingers extend. Such a configuration of the fingers can desirably reduce the on-resistance (Ron) of the FET based RF switch device.

主权项

1. A field-effect transistor (FET) device comprising a plurality of fingers arranged in an interleaved configuration such that a first group of the fingers are electrically connected to a source contact and a second group of the fingers are electrically connected to a drain contact, at least some of the fingers having a current carrying capacity that varies as a function of location along a direction in which the fingers extend.