| 发明名称 |
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE |
| 摘要 |
The invention relates to an array substrate for a display device and to a method for manufacturing an array substrate comprising a thin-film transistor (“TFT”). An array substrate according to an embodiment of the invention comprises a source electrode, a gate electrode and a drain electrode, wherein the gate electrode is located on a first metal layer, the source electrode and the drain electrode are located on a second metal layer, and in the case that dislocation occurs between the first metal layer and the second metal layer, the area of the overlapping region between the source electrode and the gate electrode keeps constant. |
| 申请公布号 |
US2015129882(A1) |
申请公布日期 |
2015.05.14 |
| 申请号 |
US201314361883 |
申请日期 |
2013.12.19 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Jiang Qinghua;Li Xiaohe;Liu Yong;Shao Xianjie;Li Hongmin |
| 分类号 |
H01L27/12;H01L29/786;H01L29/423;H01L29/66 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An array substrate comprising a thin film transistor, the thin film transistor comprises a source electrode, a gate electrode and a drain electrode, wherein the gate electrode is located on a first metal layer, and the source electrode and the drain electrode are located on a second metal layer, wherein:
the shapes of the source electrode and the gate electrode meet the condition that, in the case that dislocation occurs between the first metal layer and the second metal layer, the area of the overlapping region between the source electrode and the gate electrode keeps constant. |
| 地址 |
Beijing CN |
