Method For Manufacturing Thin-Film Transistor Substrate And Thin-Film Transistor Substrate Manufactured With Same

摘要

The present invention provides a method for manufacturing a thin-film transistor substrate and a thin-film transistor substrate manufactured with the method. The method includes: (1) providing a substrate (20); (2) forming a gate terminal (22) having a predetermined structure on the substrate (20); (3) forming a gate insulation layer (24) on the gate terminal (22) and the substrate (20); (4) forming a metal signal line (26) having a predetermined structure on the gate insulation layer (24); (5) forming an oxide semiconductor layer (28) having a predetermined structure on the gate insulation layer (24); (6) forming a passivation layer (32) having a predetermined structure on the gate insulation layer (24), the metal signal line (26), and the oxide semiconductor layer (28); and (7) forming a source/drain terminal (34) having a predetermined structure on the metal signal line (26), the oxide semiconductor layer (28), and the passivation layer (32) so as to form a thin-film transistor substrate.

主权项

1. A method for manufacturing a thin-film transistor substrate, comprising the following steps:
(1) providing a substrate; (2) forming a gate terminal having a predetermined structure on the substrate; (3) forming a gate insulation layer on the gate terminal and the substrate; (4) forming a metal signal line having a predetermined structure on the gate insulation layer; (5) forming an oxide semiconductor layer having a predetermined structure on the gate insulation layer; (6) forming a passivation layer having a predetermined structure on the gate insulation layer, the metal signal line, and the oxide semiconductor layer; and (7) forming a source/drain terminal having a predetermined structure on the metal signal line, the oxide semiconductor layer, and the passivation layer so as to form a thin-film transistor substrate.