发明名称 半導体装置
摘要 <p>A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element.</p>
申请公布号 JP5716619(B2) 申请公布日期 2015.05.13
申请号 JP20110205745 申请日期 2011.09.21
申请人 发明人
分类号 H01L29/861;H01L27/04;H01L29/06;H01L29/739;H01L29/78;H01L29/868 主分类号 H01L29/861
代理机构 代理人
主权项
地址