| 摘要 |
A p-type anode layer (2) provided on an n-type drift layer (1) in the active region. A p-type diffusion layer (3) is provided on the n-type drift layer (1) in a termination region outside the active region. An oxide film (4) covers an outer periphery of the p-type anode layer (2). An anode electrode (5) is connected to a portion of the p-type anode layer (2) not covered with the oxide film (4). An n+-type cathode layer (7) is provided below the n-type drift layer (1). A cathode electrode (8) is connected to the n+-type cathode layer (7). An area of a portion of the p-type anode layer (2) covered with the oxide film (4) is 5 to 30% of a total area of the p-type anode layer (2). |
