| 摘要 |
907,303. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. April 3, 1959 [April 5, 1958], No. 11405/59. Addition to 905,553. Class 37. A PN junction is manufactured by alloying boron, gold or gold alloy, and a further metal from the Third Group such as indium or gallium to a silicon body. In one example, 20 gm. of gold, 1 mg. of boron and 100 mg. of indium or gallium were melted at 1200‹ C. and rolled into a foil which was tempered at 300‹ C. The foil was then alloyed to a silicon disc. |
