| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a low power consumption type nonvolatile memory element which enables low voltage driving, and to provide a manufacturing method of the memory element. <P>SOLUTION: According to one embodiment of this invention, a memory element 1000, comprising: a first base substance 10A and a second base substance 20A which are disposed facing each other; and an electrolyte layer 30 sandwiched between the first base substance and the second base substance, is provided. A memory layer 100A, composed mainly of vanadium dioxide, is formed on one surface 12S of a substrate 12 of the first base substance, and the substrate has a first electrode part 110A and a second electrode part 120A which are in contact with the memory layer. A facing substrate 22 of the second base substance has a third electrode part 230A on a surface facing the first base substance. The electrolyte layer 30 is located in the vicinity of the memory layer between the first electrode part and the second electrode part. According to another embodiment of this invention, another typical memory element 2000, in which first to third electrode parts and a memory layer are formed on one base substance, is also provided. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
