发明名称 SINGLE CRYSTALLINE INGOTS, METHOD AND APPARATUS FOR MANUFACTURING THE INGOTS
摘要 The present invention relates to a method for manufacturing a monocrystalline ingot, which is performed by an apparatus for manufacturing a monocrystalline ingot, comprising: a crucible accommodating a melted solution; a pulling and driving unit pulling a seed crystal while rotating the seed crystal in contact with the melted solution so as to grow a monocrystalline ingot; and a crucible driving unit rotating the crucible, wherein the method comprises a step of minimizing a change in a flow rate of the melted solution flowing in a vertical lower portion of the single crystal ingot during the growing of the monocrystalline ingot, and reducing oxygen concentration variation in a radial direction in a horizontal section of the single crystal ingot.
申请公布号 KR20150051737(A) 申请公布日期 2015.05.13
申请号 KR20130133617 申请日期 2013.11.05
申请人 LG SILTRON INCORPORATED 发明人 HONG, YOUNG HO;PARK, HYUN WOO
分类号 C30B15/20;C30B15/30;C30B29/06 主分类号 C30B15/20
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