| 摘要 |
A semiconductor substrate encompasses a GaN substrate (11) and a single-crystal layer (12) formed of III-V nitride compound semiconductor expitaxially grown on the GaN substrate. The GaN substrate (11) has a surface orientation defined by an absolute value of an off-angle of the surface from {0001} plane towards <1-100> direction lying in a range of 0. 12 degree to 0.35 degree and by an absolute value of an off-angle of the surface from {0001} plane towards <11-20> direction lying in a range of 0.00 degree to 0.06 degree. |
