发明名称 光電変換装置
摘要 A novel photoelectric conversion device in which energy of light can be effectively utilized and performance can be improved is provided. A photoelectric conversion device includes a photoelectric conversion element and an energy conversion layer provided on a light-receiving side of a photoelectric conversion layer included in the photoelectric conversion element. The energy conversion layer includes a plurality of first layers and a plurality of second layers. The first layer and the second layer are alternately stacked. The thickness of the first layer is greater than or equal to 0.5 nm and less than or equal to 10 nm, and the thickness of the second layer is greater than or equal to 0.5 nm and less than or equal to 10 nm. The second layer can be formed using a material having a larger energy band gap than that of a material used for the first layer.
申请公布号 JP5715891(B2) 申请公布日期 2015.05.13
申请号 JP20110134177 申请日期 2011.06.16
申请人 株式会社半導体エネルギー研究所 发明人 浅見 良信;横井 智和
分类号 H01L31/055 主分类号 H01L31/055
代理机构 代理人
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