| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compound semiconductor electronic device of normally-off type by using a compound semiconductor having a wurtzite structure. <P>SOLUTION: In an epitaxial substrate, a carrier transit semiconductor layer 15 is positioned between a spacer semiconductor layer 17 and a substrate 13. In an electronic device 11, since a hetero junction extends along a reference plane R2 inclined to a reference axis Cx, a piezo electric field Pz is also inclined to the reference plane R2. A parallel component Pz(T) of the piezo electric field works as an internal electric field that extends along a hetero junction 21. The internal electric field acts on two-dimensional carriers in the hetero junction 21, thereby the carrier concentration in the hetero junction directly below a gate electrode 19 is adjusted. Due to an effect of the internal electric field, the two-dimensional carriers are not substantially accumulated in a bent part of a band of the hetero junction 21 directly below the gate electrode 19 when the gate electrode 19 is being applied with zero volt. Thus, the electronic device 11 has a normally-off characteristic. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
