METHOD AND GATE RUCTURE FOR THRESHOLD VOLTAGE MODULATION IN TRANSISTORS

摘要

The present invention provides a structure capable of controlling a threshold voltage of N and P channel transistors independently and a manufacturing method thereof. The manufacturing method of a semiconductor device according to the technology comprises the steps of; preparing a substrate including a PMOS area and an NMOS area; forming a germanium-containing channel area on the substrate of the PMOS area; a step of forming a high dielectric layer on the substrate; forming a threshold voltage control layer including lanthanide on the high dielectric layer of the NMOS area; forming a first titanium nitride on the threshold voltage control layer and the high dielectric layer of the PMOS area; forming an inhibiting oxidation layer containing silicon on the first titanium nitride of the NMOS area; forming a second titanium nitride on the first titanium nitride of the NMOS area; forming a first gate stack including the high dielectric layer, the first titanium nitride, and the second titanium nitride on the substrate of the PMOS area; and forming a second gate stack including the high dielectric layer, threshold voltage control layer, the first titanium nitride, and the inhibiting oxidation layer on the substrate of the NMOS area.