发明名称 半導体装置
摘要 <p>An object is to provide a semiconductor device which can hold stored data even when not powered and which achieves high integration by reduction of the number of wirings. The semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, e.g., an oxide semiconductor material which is a wide bandgap semiconductor. When a semiconductor material which allows a sufficient reduction in the off-state current of a transistor is used, data can be held for a long period. One line serves as the word line for writing and the word line for reading and one line serves as the bit line for writing and the bit line for reading, whereby the number of wirings is reduced. Further, by reducing the number of source lines, the storage capacity per unit area is increased.</p>
申请公布号 JP5719251(B2) 申请公布日期 2015.05.13
申请号 JP20110169935 申请日期 2011.08.03
申请人 发明人
分类号 H01L21/8242;G11C11/405;H01L21/336;H01L21/8247;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
代理机构 代理人
主权项
地址