发明名称 |
DETACHMENT OF A SELF-SUPPORTING LAYER OF SILICON<100> |
摘要 |
<p>A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.</p> |
申请公布号 |
EP2870627(A1) |
申请公布日期 |
2015.05.13 |
申请号 |
EP20130739766 |
申请日期 |
2013.07.01 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
BRALEY, CAROLE;MAZEN, FRÉDÉRIC |
分类号 |
H01L21/762;H01L31/00 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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