| 摘要 |
<p>A method of forming a superconductor-insulator-semiconductor (S-I-Sm) tunnel junction comprises removing a surface oxide layer from a surface of a layer of silicon, germanium or silicon-germanium alloy 2; heating the layer of silicon, germanium or silicon-germanium alloy 2 to at least 550 °C in a vacuum; forming a dielectric layer 3 on the surface of the layer of silicon, germanium or silicon-germanium alloy 2; and depositing a superconductor 4 on the dielectric layer 3. Also disclosed is the above superconductor-insulator-semiconductor structure wherein the junction exhibits a tunnel resistance less than 50kΩµm2 at a temperature which is at, or below, the transition temperature of the superconductor. Further disclosed is the above superconductor-insulator-semiconductor tunnel junction wherein the ratio of the broadening factors of a junction without the dielectric layer and the tunnel of the invention is more than 10, 100 or 1000 at a temperature which is at, or below, half the transition temperature of the superconductor.</p> |
