| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve adhesiveness between a metal film and a deposited film when deposition is made on the metal film at low temperature using plasma. <P>SOLUTION: A treatment furnace 202 includes: a processing chamber 201; buffer chambers 423, 433 having gas supply ports 425, 435; a processing gas supply system 310 for supplying first processing gas to the processing chamber; processing gas supply systems 320, 330 capable of supplying second processing gas to the buffer chambers 423, 433; a high-frequency power supply 270; and electrodes 471, 472, 481, 482 for plasma generation. By use of the treatment furnace 202, a substrate having the metal film formed on the surface thereof is successively exposed to the first processing gas and the second processing gas, in a state high-frequency power is not applied to the electrodes for plasma generation, so as to form a first film on the metal film. Thereafter, the substrate having the formed first film is alternately exposed to the first processing gas and the second processing gas which is activated by the application of the high-frequency power to the electrodes, so as to form a second film on the metal film. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
