| 摘要 |
<p>A Silicon detector for x-ray imaging is based on multiple semiconductor detector modules (A) arranged together to form an overall detector area, where each semiconductor detector module includes an x-ray sensor of crystalline Silicon oriented edge-on to incoming x-rays and connected to integrated circuitry for registration of x-rays interacting in the x-ray sensor through the photoelectric effect and through Compton scattering and for an incident x-ray energy between 40 keV and 250 keV to provide the spatial and energy information from these interactions to enable an image of an object. Further, anti-scatter modules (B) are interfolded between at least a subset of the semiconductor detector modules to at least partly absorb Compton scattered x-rays.</p> |
