| 摘要 |
<p>918,755. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Sept. 9, 1960 [Sept. 21, 1959], No. 32092/59. Class 37. In a semi-conductor device, such as one comprising a point or junction rectifying contact, a semi-conductor wafer is ohmically secured to a base made of like semi-conductor material by means of a thin layer of metal or alloy extending on the base beyond the periphery of the wafer, and having a terminal member in ohmic contact therewith. In an embodiment, a Si wafer is secured to a relatively more massive base of Si by means of a thin layer of Au deposited from vapour, or by melting in vacuo or an inert atmosphere, on the base, to cover an area greater than that of the wafer. The wafer, which may also be Au-coated, is brazed to the base, and is subsequently ground and/or chemically etched to the desired thickness, or to a wedge-shaped cross-section. The base may be fixed to a carrier body of metal. The layer of Au &c. may extend round the edge of the base and on to the surface of the base remote from the wafer, and may be used to braze the base to the carrier body, the terminal member being connected to the Au &c. layer on the edge of the base.</p> |
