Multi-factor advanced process control method and system for integrated circuit fabrication

摘要

A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.

主权项

1. A method comprising:
determining a first physical characteristic of a wafer and a second physical characteristic of the wafer, the first physical characteristic and the second physical characteristic corresponding to different physical characteristics and each selected from the group of physical characteristics consisting of an offset spacer width critical dimension on the wafer and a main spacer width critical dimension on the wafer; determining a variation of a device performance parameter of the wafer based on the first physical characteristic and the second physical characteristic, wherein the device performance parameter is one of saturation drain current and threshold voltage; constructing a model for the device performance parameter as a function of the first physical characteristic and the second physical characteristic based on the determined variation of the device performance parameter of the wafer; and performing a fabrication process based on the model.