发明名称 |
Thin film capacitor |
摘要 |
A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Ln of a protrusion part of nth (n≧2) internal electrode layer from the under electrode side is smaller than another protrusion amount Ln-1 of another protrusion part of (n−1)th internal electrode layer. |
申请公布号 |
US9030800(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201313796822 |
申请日期 |
2013.03.12 |
申请人 |
TDK Corporation |
发明人 |
Namikawa Tatsuo;Yano Yoshihiko;Oikawa Yasunobu |
分类号 |
H01G4/30;H01G4/228;H01G4/20;H01G4/06;H01G4/33;H01G4/38;H01G4/232 |
主分类号 |
H01G4/30 |
代理机构 |
Posz Law Group, PLC |
代理人 |
Posz Law Group, PLC |
主权项 |
1. A thin film capacitor, comprising:
an under electrode; a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction; and connection electrodes positioned perpendicularly to the plurality of internal electrode layers and/or the under electrode layer, to which at least a portion of each of the protrusion parts contacts the connection electrodes, wherein assuming that insert amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, an insert amount Ln of a protrusion part of nth (n≧2) internal electrode layer from the under electrode side is smaller than another insert amount Ln−1 of another protrusion part of (n−1)th internal electrode layer. |
地址 |
Tokyo JP |