Trench isolation structure having isolating trench elements

摘要

A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle θ (0°<θ<90°) from the first direction.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate; an insulating material that is formed within the element isolating trench; element formation regions that are surrounded by the element isolating trench; and semiconductor elements that are respectively formed in the element formation regions, wherein the element isolating trench includes (A) a first element isolating trench extending in a first direction, (B) a second element isolating trench extending in the first direction, (C) a third element isolating trench extending in a second direction from a first connection portion on the first element isolating trench to a second connection portion on the second element isolating trench, the second direction inclined at an angle θ (0°<θ<90°) from the first direction, and (D) a fourth element isolating trench extending in a third direction that is at a right angle to the first direction from a third connection portion towards an opposite side from a side on which the second element isolating trench is disposed, the third connection portion being on the first element isolating trench and facing in the first direction the first connection portion via the second connection portion, and wherein in the element isolating trench structure, a structure formed by (A) to (D) is repeatedly disposed.