| 主权项 |
1. A semiconductor device comprising:
a sensor unit including a sensing part adjacent to a surface of the sensor unit, the sensing part outputting a sensor signal according to a physical quantity; a semiconductor substrate having a surface opposed to the sensor unit, the semiconductor substrate defining a recessed portion recessed from the surface of the semiconductor substrate at a region opposing to the sensing part; and an insulation film disposed between the surface of the sensor unit and the surface of the semiconductor substrate, wherein the sensor unit and the semiconductor substrate are stacked such that an air-tight sealed chamber is provided between the sensor unit and the recessed portion of the semiconductor substrate, and the sensing part is disposed in the air-tight sealed chamber; the surface of the semiconductor substrate, which is provided on a periphery of the recessed portion, includes a boundary region and a bonding region, the boundary region being at a perimeter of the recessed portion, the bonding region being on a periphery of the boundary region, the bonding region has an area greater than an area of the boundary region, the insulation film is formed on the surface of the semiconductor substrate, the insulation film has a non-uniform thickness such that a thickness of a portion of the insulation film disposed on the bonding region is greater than a thickness of a portion of the insulation film disposed on the boundary region, and the portion of the insulation film disposed on the bonding region is bonded to the surface of the sensor unit. |
