Structure including gallium nitride substrate and method of manufacturing the gallium nitride substrate

摘要

A structure includes a silicon substrate, a plurality of silicon rods on the silicon substrate, a silicon layer on the plurality of silicon rods, and a GaN substrate on the silicon layer.

主权项

1. A structure comprising:
a plurality of silicon rods on a silicon substrate; a silicon layer on the plurality of silicon rods, the silicon layer contacting each of the plurality of silicon rods; and a gallium nitride (GaN) substrate on the silicon layer.