Semiconductor device and manufacturing method for semiconductor device

摘要

A semiconductor device includes multilayer interconnects and two variable resistance elements (22a, 22b) that are provided among the multilayer interconnects and that include first electrodes (5), second electrodes (10a, 10b), and variable resistance element films (9a, 9b) that are each interposed between first electrodes (5) and respective second electrodes (10a, 10b). Either the first electrodes (5) or the second electrodes (10a, 10b) of the two variable resistance elements (22a, 22b) are unified.

主权项

1. A semiconductor device, comprising:
multilayer interconnects; and two variable resistance elements that are provided among said multilayer interconnects and that include first electrodes, second electrodes, and a variable resistance element film that is interposed between these electrodes, wherein: electrode types of said first electrodes or electrode types of said second electrodes of said two variable resistance elements are unified, said two variable resistance elements are bipolar variable resistance elements and are connected in a series, said two variable resistance elements are made of an electrical element that is provided in a signal path, same-polarity electrodes of said two variable resistance elements are connected together, and in the two unconnected electrodes of said two variable resistance elements, one electrode is an input terminal and the other electrode is an output terminal.