Non-volatile memory device and method for manufacturing same

摘要

According to an embodiment, a non-volatile memory device includes a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film provided between the semiconductor layer and the charge storage layer. The device also includes a first conductive layer provided on the charge storage layer, a second conductive layer provided between the charge storage layer and the first conductive layer, a second insulating film provided between the charge storage layer and the second conductive layer, and a third insulating film provided between the first conductive layer and the second conductive layer.

主权项

1. A non-volatile memory device comprising:
a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating film provided between the semiconductor layer and the charge storage layer, the semiconductor layer having a stripe shape extending in a first direction; a first conductive layer provided on the charge storage layer, the first conductive layer extending in a second direction crossing the first direction; a second conductive layer provided between the charge storage layer and the first conductive layer, the second conductive layer extending in the second direction; a second insulating film provided between the charge storage layer and the second conductive layer; and a third insulating film provided between the first conductive layer and the second conductive layer.