Light emitting device

摘要

Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer.

主权项

1. A light emitting device comprising:
a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer comprises a first nitride buffer layer, and the first nitride buffer layer comprises:
a first aluminum nitride layer on the silicon substrate;a first aluminum gallium nitride layer on the first aluminum nitride layer; anda first gallium nitride layer on the first aluminum gallium nitride layer,wherein the first gallium nitride layer is directly disposed on the first aluminum gallium nitride layer,wherein the first aluminum gallium nitride layer is directly disposed on the first aluminum nitride layer, andwherein the first aluminum gallium nitride layer is disposed between a top surface of the first aluminum nitride layer and a bottom surface of the first gallium nitride layer,wherein the nitride buffer layer comprises a second nitride buffer layer on the first nitride buffer layer, andthe second nitride buffer layer comprises:
a second aluminum nitride layer on the first gallium nitride layer;a second aluminum gallium nitride layer on the second aluminum nitride layer; anda second gallium nitride layer on the second aluminum gallium nitride layer,wherein the nitride buffer layer comprises a third nitride buffer layer on the second nitride buffer layer, andthe third nitride buffer layer comprises a third aluminum nitride layer on the second gallium nitride layer and a third aluminum gallium nitride layer on the third aluminum nitride layer.