Super junction semiconductor device comprising implanted zones

摘要

In a semiconductor substrate with a first surface and a working surface parallel to the first surface, columnar first and second super junction regions of a first and a second conductivity type are formed. The first and second super junction regions extend in a direction perpendicular to the first surface and form a super junction structure. The semiconductor portion is thinned such that, after the thinning, a distance between the first super junction regions having the second conductivity type and a second surface obtained from the working surface does not exceed 30 μm. Impurities are implanted into the second surface to form one or more implanted zones. The embodiments combine super junction approaches with backside implants enabled by thin wafer technology.

主权项

1. A super junction semiconductor device comprising:
a semiconductor portion with a first surface and a second surface parallel to the first surface, the semiconductor portion comprising a drain layer of a first conductivity type formed at least in a cell area; columnar first super junction regions of a second, opposite conductivity type, extending in a direction perpendicular to the first surface and separated by columnar second super junction regions of the first conductivity type, the first and second super junction regions forming a super junction structure between the first surface and the drain layer, wherein a distance between the first super junction regions and the second surface does not exceed 30 μm; and one or more implanted zones directly adjoining or overlapping the drain layer.