| 发明名称 |
Method for processing a carrier, a carrier, an electronic device and a lithographic mask |
| 摘要 |
Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles. |
| 申请公布号 |
US9029049(B2) |
申请公布日期 |
2015.05.12 |
| 申请号 |
US201313771129 |
申请日期 |
2013.02.20 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schneider Jens;Feick Henning;Heller Marcel;Kaiser Dieter |
| 分类号 |
H01L21/266;G03F1/00;G03F7/20;H01L29/36;G01L1/22;H01L21/027;H01L21/265;H01L43/06;H01L43/14;H01L29/78;H01L29/08;H01L27/02;H01L29/861 |
主分类号 |
H01L21/266 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a carrier, the method comprising:
changing a three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses, wherein changing the three-dimensional structure of the mask layer comprises forming at least a first mask layer region comprising a gradual decrease of the thickness of the mask layer along a predefined direction parallel to a surface of the carrier and at least a second mask layer region comprising a gradual increase of the thickness of the mask layer along the same direction; applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles. |
| 地址 |
Neubiberg DE |
