发明名称 |
On die thermal sensor of semiconductor memory device |
摘要 |
An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage. |
申请公布号 |
US9028141(B2) |
申请公布日期 |
2015.05.12 |
申请号 |
US201113277517 |
申请日期 |
2011.10.20 |
申请人 |
Hynix Semiconductor Inc. |
发明人 |
Jeong Chun-Seok;Kim Yong-Ki |
分类号 |
G01K7/00;G11C7/00;G01K7/01 |
主分类号 |
G01K7/00 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. An on die thermal sensor (ODTS) of a semiconductor memory device, comprising:
a high voltage generator that generates a high voltage having a voltage level higher than that of a power supply voltage; and a thermal information output unit for sensing a temperature of the semiconductor memory device which uses the power supply voltage and outputting the sensed temperature as a thermal information code by using the high voltage, wherein the thermal information output unit uses the high voltage as its driving voltage, wherein the thermal information output unit includes: a thermal sensor for detecting temperature variation of the semiconductor memory device to output a first comparing voltage, which is corresponding to the sensed temperature with the ratio of 1:1 and used in outputting the thermal information code, wherein the thermal sensor uses the high voltage as its driving voltage to increase a variable voltage level of the first comparing voltage. |
地址 |
Gyeonggi-do KR |