发明名称 On die thermal sensor of semiconductor memory device
摘要 An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.
申请公布号 US9028141(B2) 申请公布日期 2015.05.12
申请号 US201113277517 申请日期 2011.10.20
申请人 Hynix Semiconductor Inc. 发明人 Jeong Chun-Seok;Kim Yong-Ki
分类号 G01K7/00;G11C7/00;G01K7/01 主分类号 G01K7/00
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. An on die thermal sensor (ODTS) of a semiconductor memory device, comprising: a high voltage generator that generates a high voltage having a voltage level higher than that of a power supply voltage; and a thermal information output unit for sensing a temperature of the semiconductor memory device which uses the power supply voltage and outputting the sensed temperature as a thermal information code by using the high voltage, wherein the thermal information output unit uses the high voltage as its driving voltage, wherein the thermal information output unit includes: a thermal sensor for detecting temperature variation of the semiconductor memory device to output a first comparing voltage, which is corresponding to the sensed temperature with the ratio of 1:1 and used in outputting the thermal information code, wherein the thermal sensor uses the high voltage as its driving voltage to increase a variable voltage level of the first comparing voltage.
地址 Gyeonggi-do KR